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E-book Advanced Memristor Modeling : Memristor Circuits and Networks

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Penilaian

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The resistance-switching phenomenon, observed in a number of amorphousmetal and transient chemical oxides, such as SiO2, Al2O3, Ta2O5, has beeninvestigated since 1970 [1]. It has been established that such oxide materials placedin a metal-oxide-metal structure have the capability of changing their conductance inaccordance to the applied voltage and memorizing their conductance for a long-timeinterval [1,2]. Similar unusual and surprising behavior has been predicted for thememristor element by Leon Chua in 1971 [3].The memristor element is proposed in accordance to symmetry considerationsand the relations between the four basic electric quantities (current, voltage, electriccharge and flux linkage) [3]. The electric charge is defined as a time integral ofthe current, and the magnetic flux is expressed as a time integral of the voltage.The resistor relates the voltage and current, the inductor is described with Faraday’sLaw using the relation between the current and magnetic flux, and the basiccapacitor equation is expressed using the relation between electric charge and voltage.The proposed fourth fundamental two-terminal element relates the flux linkage,expressed as a time integral of the applied voltage, to the electric charge. The memristor is an essential passive one-port element together with the resistor,inductor, and capacitor [3–5]. The memristor is a highly nonlinear component [5,6].It directly relates the electric charge and the flux linkage?which is expressedas a time integral of the memristor voltage [3,4]. The memristor has the valuablecapability of remembering the electric charge moving through its cross-section andits resistanceM, when the electrical signals are switched off [4,5]. Its current–voltagerelationship that will be discussed in detail later is a pinched hysteresis loop, ofwhich the shape and range depend on both the magnitude and the frequency of theapplied signal [4,6]. Since the memristor element could remember its conductanceafter the source is turned off, then the memristor could be applied as a non-volatilememory element [4–7]. The memory effect is based on accumulating electric chargesin the memristor structure and holding them when the memristor voltage is zero. The polymeric memristors [8] are based on unique plastic materials. Single orparcels of molecules are able to conduct and switch currents and memorizeinformation using charge accumulation. Instead of coding “0” and “1” as the amountsof charge stored in a silicon memory unit, polymer-based resistive random-accessmemory supplies information in a diverse way, for instance, based on the low or highconductance in reply to an applied external electrical field. The conductance statescan be read non-destructively. Because electric conductivity is the multiplicationof charge volumetric concentration and ionic mobility, changes in either thecharge concentration or ionic mobility, or both can cause changes in the elementresistance states. In the polymeric memory materials, the resistance bi-stabilitymay appear from alterations of the characteristics of the switching material, and afew switching algorithms, together with charge transport, structure alteration andreduction-oxidation exchange.

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Ketersediaan

Informasi Detail

Judul Seri

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No. Panggil

620 MLA a

Penerbit

Switzerland : MDPI - Multidisciplinary Digital Publishing Institute., 2019

Deskripsi Fisik

186 hlm

Bahasa

English

ISBN/ISSN

9783038971030

Klasifikasi

620

Tipe Isi

text

Tipe Media

computer

Tipe Pembawa

online resource

Edisi

-

Subjek

Engineering

Info Detail Spesifik

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Pernyataan Tanggungjawab

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Versi lain/terkait

Lampiran Berkas

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